ace 1500 b p - channel enhancement mode field effect transistor ver 1. 2 1 d escription the ace 1500 b is p - channel enhancement mode power mosfet which is produced with high cell density and dmos trench technology .this device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin ou tline saves pcb consumption. features ? v ds (v)= - 2 0v ? i d = - 1.6 a (v gs = - 4.5v) ? r ds(on) 155m ( v gs = - 4. 5v ) ? r ds(on) 168m ( v gs = - 2. 5v ) ? r ds(on) 220m ( v gs = - 1.8 v ) absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds s - 2 0 v gate - source voltage v gs s 12 v drain current (continuous) t a =25 o c i d - 1.6 a drain current (pulse ) i d m - 5 power dissipation t a =25 o c p d 350 m w operating and storage temperature range t j , t stg - 55 to 150 o c packaging type sot - 323
ace 1500 b p - channel enhancement mode field effect transistor ver 1.2 2 ordering i nformation ace 1500 b xx + h electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit s tatic drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 2 0 v zero gate voltage drain current i dss v ds = - 2 0v, v gs =0v - 1 ua gate leakage current i gss v gs = 12 v, v ds =0v 100 na static drain - source on - resistance r ds(on) v gs = - 4.5 v, i d = - 1 a 145 1 55 m v gs = - 2.5 v, i d = - 0.5a 150 168 v gs = - 1.8 v, i d = - 0.3a 180 220 gate threshold voltage v gs(th) v ds =v gs , i d = - 250 ua - 0.4 - 0.7 - 1 v forward transconductance g fs v ds = - 5 v, i d = - 2 a 5 s diode forward voltage v sd i sd = - 1.6a, v gs =0v - 0.93 - 1.1 v maximum bo dy - diode continuous current i s - 1.6 a switching total gate charge q g v ds = - 6 v, i d = - 2.8 a v gs = - 4. 5v 4.9 nc gate - source charge q gs 0.62 gate - drain charge q gd 1.07 turn - on delay time t d(on) v d s = - 6 v, r gen = 6 , v g s = - 4.5 v r l = 6 10.1 ns turn - on rise time t f 4.76 turn - off delay time t d(off) 84.1 turn - off fall time t f 25.2 dynamic input capacitance c iss v ds = - 6 v, v gs =0v f= 1m hz 472 pf output capacitance c oss 71 reverse transfer capacitance c rss 51 notes: 1. pulse test; p ulse width 300 s, duty cycle 2 %. 2. guaranteed by design, not subject to production testing. cm : sot - 323 pb - free halogen - free
ace 1500 b p - channel enhancement mode field effect transistor ver 1.2 3 typical performance characteristics
ace 1500 b p - channel enhancement mode field effect transistor ver 1.2 4 typical performance characteristics
ace 1500 b p - channel enhancement mode field effect transistor ver 1.2 5 packing information sot - 323 unit: mm
ace 1500 b p - channel enhancement mode field effect transistor ver 1.2 6 notes ace does not assume any responsibility for use as critical components in lif e support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any c omponent of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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